Product Description
gallium arsenide GaAs polycrystalline price
Product introduction
ynthetic methods: level method (HB)
Use: can be used for light emitting diode (LED), laser diode (LD), and solar cells in areas such as gallium arsenide single crystal production.
Gallium arsenide polycrystalline material performance metrics
The raw material purity More than 6 n and Conductive type N
mobility(cm2/Vs):3500--4500
Carrier concentration(cm-3):1.0×1016~1.0×1017
Product appearance:D glyph
size:About 60 mm x 45 mm wide x 330 mm long
process can be high purity gallium (6 n and 7 n) and arsenic (6 n and 7 n) containing a small amount of impurity in complicated to crystal material spindle end (tail has been removed before provide to the user), so as to further improve the purity of polycrystalline materials, it is helpful to improve the follow-up into crystalline of gallium arsenide single crystal growth rate and quality.
We also supply Gallium metal,Gallium arsenide GaAs Single crystal ,GaAs polycrystal ,GaAs wafer ,GaN wafer,GaP wafer,gallium oxide with high purity.
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