Arsenide Gallium Monocrystal

• Purity: 6n /8n
• Alloy: Non-alloy
• Secondary: Non-secondary
• Model NO.: 6N-8N
• product: Gallium Arsenide GaAs
• Offer: GaAs Poly/Single/Wafer
• Transport Package: Carton Box
• Specification: 6N-8N
• Trademark: XWX
• Origin: China
• Production Capacity: 10000mt

Product Description

Gallium arsenide GaAs single crystal rod

Growth method: VGF

Conductive type: N

Doping elements: Si

The diameter: 2-4 Inches
The direction: (100) 150 ± 10off toward 111A

Carrier Concentration
Min: 0.2 E18
Max: 4.0 E18/cm3
The resistivity:
Min: 0.8 E-3
Max: 9.0 E-3Ohm. Cm
Mobility: ≥ 1800cm2/V. S
The dislocation density: ≤ 3500/cm2


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