Gaas Wafer

Product Details
Customization: Available
Purity: 6n /8n
Alloy: Non-alloy
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Registered Capital
500000 RMB
Plant Area
101~500 square meters
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Basic Info.

Model NO.
6N-8N
Secondary
Non-secondary
product
Gallium Arsenide GaAs
Offer
GaAs Poly/Single/Wafer
Transport Package
Carton Box
Specification
6N-8N
Trademark
XWX
Origin
China
Production Capacity
10000mt

Product Description

GaAs wafer /Gallium arsenide wafers
Growth Method: VGF
Conduct Type: N
Dopant: GaAs-Si
Diameter: 2-4 inch
Orientation: (100)150± 0.50 off toward (111)A
OF location/length: EJ [ 0-1-1]± 0.50/17± 1
IF location/length: EJ [ 0-1 1 ]± 0.50/7± 1
Ingot CC: Min: 0.2E18 Max: 4E18
Resistivity: Min: 0.8E-3 Max: 9.0E-3
Mobility: ≥ 1500
EPD: ≤ 5000
Thickness: 350± 25
We also supply Gallium arsenide GaAs Single crystal, GaAs polycrystal, GaAs wafer, gallium oxide with high purity. Special order is available, plz contact us.
 

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