Product Description
Gallium arsenide GaAs single crystal rod
Growth method: VGF
Conductive type: N
Doping elements: Si
The diameter: 2-4 Inches
The direction: (100) 150 ± 10off toward 111A
Carrier Concentration
Min: 0.2 E18
Max: 4.0 E18/cm3
The resistivity:
Min: 0.8 E-3
Max: 9.0 E-3Ohm. Cm
Mobility: ≥ 1800cm2/V. S
The dislocation density: ≤ 3500/cm2
We also supply Gallium arsenide GaAs Single crystal, GaAs polycrystal, GaAs wafer, gallium oxide with high purity. Special order is available, plz contact us.
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