Gaas Poly 6n

Porduct: Gallium Arsenide Gaas
Purity: 6n /8n
Offer: Gaas Poly/Single/Wafer
Transport Package: Carton Box
Specification: 6N-8N
Trademark: XWX
Customization:
Gold Member Since 2022

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Basic Info.

Model NO.
6N/8N
Origin
China
Production Capacity
10000mt

Product Description

Gallium arsenide GaAs polycrystalline price
Product introduction
Ynthetic methods: Level method (HB)
Use: Can be used for light emitting diode (LED), laser diode (LD), and solar cells in areas such as gallium arsenide single crystal production.
Gallium arsenide polycrystalline material performance metrics
The raw material purity More than 6 n and Conductive type N
Mobility(cm2/Vs): 3500--4500
Carrier concentration(cm-3): 1.0× 1016~1.0× 1017
Product appearance: D glyph
Size: About 60 mm X 45 mm wide X 330 mm long
Process can be high purity gallium (6 n and 7 n) and arsenic (6 n and 7 n) containing a small amount of impurity in complicated to crystal material spindle end (tail has been removed before provide to the user), so as to further improve the purity of polycrystalline materials, it is helpful to improve the follow-up into crystalline of gallium arsenide single crystal growth rate and quality.

We also supply Gallium arsenide GaAs Single crystal, GaAs polycrystal, GaAs wafer, gallium oxide with high purity.

Contact: Jessica Chan
Tel: +86-371-68008077
Www. Xinweixin. Cn

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Gold Member Since 2022

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Manufacturer/Factory, Trading Company
Registered Capital
500000 RMB
Plant Area
101~500 square meters