Product Description
GaAs wafer /Gallium arsenide wafers
Growth Method: VGF
Conduct Type: N
Dopant: GaAs-Si
Diameter: 2-4 inch
Orientation: (100)150± 0.50 off toward (111)A
OF location/length: EJ [ 0-1-1]± 0.50/17± 1
IF location/length: EJ [ 0-1 1 ]± 0.50/7± 1
Ingot CC: Min: 0.2E18 Max: 4E18
Resistivity: Min: 0.8E-3 Max: 9.0E-3
Mobility: ≥ 1500
EPD: ≤ 5000
Thickness: 350± 25
We also supply Gallium arsenide GaAs Single crystal, GaAs polycrystal, GaAs wafer, gallium oxide with high purity. Special order is available, plz contact us.
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